Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3
نویسندگان
چکیده
Oxide interface engineering has attracted considerable attention since the discovery of its exotic properties induced by lattice strain, dislocation and composition change at the interface. In this paper, the atomic resolution structure and composition of the interface between the lead-free piezoelectric (K0.5Na0.5)NbO3 (KNN) thin films and single-crystalline SrTiO3 substrate were investigated by means of scanning transmission electron microscopy (STEM) combining with electron energy loss spectroscopy (EELS). A sharp epitaxial interface was observed to be a monolayer composed of Nb and Ti cations with a ratio of 3/1. The First-Principles Calculations indicated the interface monolayer showed different electronic structure and played the vital role in the asymmetric charge distribution of KNN thin films near the interface. We also observed the gradual relaxation process for the relatively large lattice strains near the KNN/STO interface, which remarks a good structure modulation behavior of KNN thin films via strain engineering.
منابع مشابه
Optical Properties of Ferroelectric Epitaxial K0.5Na0.5NbO3 Films in Visible to Ultraviolet Range.
The complex index of refraction in the spectral range of 0.74 to 4.5 eV is studied by variable-angle spectroscopic ellipsometry in ferroelectric K0.5Na0.5NbO3 films. The 20-nm-thick cube-on-cube-type epitaxial films are grown on SrTiO3(001) and DyScO3(011) single-crystal substrates. The films are transparent and exhibit a significant difference between refractive indices Δn = 0.5 at photon ener...
متن کاملEpitaxial strain stabilization of a ferroelectric phase in PbZrO3 thin films
PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (dPZO ∼ 5–160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (dPZO 10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with dPZO ∼ 22 nm and became abundant in the thi...
متن کاملObservation of electrically-inactive interstitials in Nb-doped SrTiO3.
Despite rapid recent progress, controlled dopant incorporation and attainment of high mobility in thin films of the prototypical complex oxide semiconductor SrTiO3 remain problematic. Here, analytical scanning transmission electron microscopy is used to study the local atomic and electronic structure of Nb-doped SrTiO3 both in ideally substitutionally doped bulk single crystals and epitaxial th...
متن کاملIntegration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domain...
متن کاملEpitaxial Lead Zirconate Titanate Nanocrystals Obtained by a Self-Patterning Method
Epitaxial lead zirconate titanate nanoislands were obtained by a self-patterning method using the instability of ultrathin films during high-temperature treatments. After high-temperature annealing, the as-deposited film breaks into islands with a narrow size distribution. Nanostructures, as small as 20 nm lateral size with a height of 9 nm, were epitaxially grown on Nb-doped (001) SrTiO3 subst...
متن کامل